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  • The effect of deposition conditions on the properties

    Zirconium nitride films were deposited on silicon(100) substrates using direct current reactive magnetron sputtering. 75 At a DC negative bias voltage of −26.3 V, a significant (200) preferred orientation in the film was observed. The ZrN diffraction peaks were shifted toward a high angle compared to bulk ZrN, indicating the presence of ...

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  • Mixed ternary transition metal nitrides: A

    2019-3-1 · Mixed crystals of the composition Mn 4-x Me x N 1-x/4 hx/4 (where Me = Cr, Mn, Ni, Cu, or Zn, and “h” denotes holes in the nitrogen sub-lattice), derived from Mn 4 N, the 6-phase in the system Mn/N, have been investigated as perovskite derived types. Incorporation of Me depends on the stability of the TTMNs of the competing metals.

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    The fabrication of synthetic nanopores with dimensional and electrical properties similar to organic alpha-hemolysin (α-HL) nanopores is required for the development of a novel genotyping device. This thesis details the development of synthetic nanopores with diameters below 5 nm fabricated by sputtering a free standing silicon nitride membrane using a tightly focused electron beam. Nanometer ...

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    Zirconium nitride films were deposited on silicon(100) substrates using direct current reactive magnetron sputtering. 75 At a DC negative bias voltage of −26.3 V, a significant (200) preferred orientation in the film was observed. The ZrN diffraction peaks were shifted toward a high angle compared to bulk ZrN, indicating the presence of ...

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    2021-1-20 · WEAR MECHANISMS OF SILICON NITRIDE BEARING MATERIALS UNDER CONTACT FATIGUE STRESSES By ZHENG CHEN A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF ...

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    A thin-film resistor (figure 11.3) is fabricated by thermal evaporation or sputtering of a metallic film 0.1 μm thick, e.g. NiCr or TaN (tantalum nitride), on a substrate, and then photolithographically etching the film into a resistive metal pattern.A typical example is as follows: film material: nichrome (NiCr); substrate: alumina (Al 2 O 3); passivation: silicon nitride (Si 3 N 4 ...

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    2021-5-19 · Thermal conductivity is a material property that describes ability to conduct heat.Thermal conductivity can be defined as 'the quantity of heat transmitted through a unit thickness of a material - in a direction normal to a surface of unit area - due to a unit …

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    2018-6-1 · Silicon Nitride Equation of State. NASA Astrophysics Data System (ADS) Swaminathan, Pazhayannur; Brown, Robert. 2015-06-01. This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si 3 N 4) .Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. . Crystalline phases …

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    2016-9-28 · ABSTRACT Silicon nitride (Si3N4) ceramic is used in numerous applications because of its superior properties, such as high-temperature strength, good oxidation resistance and low thermal expansion coefficient. Therefore, it becomes one of the most promising candidates as structural and functional ceramic materials.

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    2018-11-8 · Silicon nitride, Si 3 N 4, can be formed by directly reacting silicon with nitrogen above 1300 °C, but a more economical means of production is by heating silica and coke in a stream of nitrogen and hydrogen gas at 1500 °C. It would make a promising ceramic if not for the difficulty of working with and sintering it: it is chemically near ...

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